An international team of researchers has demonstrated for the first time that a single molecule can operate as a field-effect transistor. The team published its results on Nature Physics in the August 2015.
The experiments were performed in Berlin at the Paul-Drude-Institut für Festkörperelektronik (PDI), in collaboration with researchers at the Free University of Berlin (FUB), the NTT Basic Research Laboratories (NTT-BRL) in Japan, and the U.S. Naval Research Laboratory (NRL) in Washington, D.C.
The researchers used a technique first demonstrated by researchers at IBM in 1990 when they created the letters I, B, and M by moving single atoms around on a metal surface with a scanning tunneling microscope (STM). In order for the molecule to function as a transistor, the researchers had to deposit it—as well as the charged indium atoms that surround it, forming the gate—on a semiconductor surface (in this case, indium arsenide) instead of a metal.
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